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1. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes | |||
Jia Yunpeng,Wu Yu,Hu Dongqing | |||
Electrics, Communication and Autocontrol Technology 25 February 2013 | |||
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Abstract:In this paper, the temperature dependence modes in modern p-i-n power diodes is investigated. Resorting to therotical derivation, an inversion point of temperature coefficiency TK in current-voltage characteristics of p-i-n power diodes is proved to exist. Semiconductor device simulations are used in order to determine the parameters which influence temperature coefficiency TK. Both simulation and experimental results show that a positive temperature coefficiency TK for forward voltage drop VF in interesting current region is possible, if the relating parameters is moderately adjusted. With a SEM microgragh technique, the structure of the experimental samples were measured. | |||
TO cite this article:Jia Yunpeng,Wu Yu,Hu Dongqing. A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes[OL].[25 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4523193 |
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