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1. Control technology of pore dimension in the photo-electrochemical etching for high aspect ratios macroporous silicon arrays | |||
Wang Guozheng,Wang Ji,Qin Xulei,Fu Shencheng,Wang Yang,Li Ye,Duanmu Qingduo | |||
Electrics, Communication and Autocontrol Technology 12 April 2010 | |||
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Abstract:High aspect ratios macroporous silicon arrays (MSA) have received much attention for their potential applications in silicon microchannel plates, MEMS devices, photonic crystals and so on. In order to fabricating perfect high aspect ratios MSA structure, photo-electrochemical (PEC) etching of MSA and the control technology of pore dimension were studied in detail. The current-voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side illumination. The critical current density JPS was discussed and the basic condition of etching current density for steady MSA growth was proposed. An indirectly method was presented to measure the relation of JPS at the pore tip and etching time. The pore dimension was controlled by changing the etching current density according to the measuring result of JPS and high aspect ratios MSA growth was realized. MSA with 317 m of depth and 105 of aspect ratios was obtained. | |||
TO cite this article:Wang Guozheng,Wang Ji,Qin Xulei, et al. Control technology of pore dimension in the photo-electrochemical etching for high aspect ratios macroporous silicon arrays[OL].[12 April 2010] http://en.paper.edu.cn/en_releasepaper/content/41816 |
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