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1. Influence of synthetic condition on properties of Y2O3:Eu3+ nanophosphors | |||
Chaonan Wang,Zhifang Wang,Weiping Zhang,Min Yin | |||
Physics 21 March 2008 | |||
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Abstract:In this paper, Y2O3:Eu3+ (3%) nano powders were prepared by auto-combustion method and the effect of PH value of the precursor solution was investigated. The XRD and SEM analyses indicate that samples prepared under high PH value have less porous morphology and larger particle size, at the same time, they present stronger luminescence intensity revealed by emission. The excitation spectra show a red shift with the decrease of PH value and the decay curves show shorter lifetime with the increase of crystalline size. | |||
TO cite this article:Chaonan Wang,Zhifang Wang,Weiping Zhang, et al. Influence of synthetic condition on properties of Y2O3:Eu3+ nanophosphors[OL].[21 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19580 |
2. Raman spectrum of Vanadium Pentoxide from density-functional perturbation theory | |||
Zhou Bo,Deyan He | |||
Physics 17 March 2008 | |||
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Abstract:We present \\\\\\\\textit{ab initio} calculation within the framework of density-functional theory on band structure and vibrational properties of bulk V$_2$O$_5$. The structure of V$_2$O$_5$ comes from optimization of the experimental data with lattice paraments fixed. The band structure of the optimized structure has been calculated, and the result fits the experimental data very well and also gives the similar results as those calculated with other methods. The phonon eignefrequencies of the $\\\\\\\\Gamma$ point of V$_2$O$_5$ bulk have been calculated \\\\\\\\textit{ab initio} in density-functional perturbation theory. The calculated vibrational frequencies are in good agreement with observed Infrared and Raman frequencies, and the predictive full phonon dispersion of bulk V$_2$O$_5$ has also been obtained. Further we calculated the Raman spectrum of V$_2$O$_5$ powder sample using the obtained Raman susceptibility. Calculated and measured intensities show overall good agreement. | |||
TO cite this article:Zhou Bo,Deyan He. Raman spectrum of Vanadium Pentoxide from density-functional perturbation theory[OL].[17 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19375 |
3. Quantum Interference Effects in Spontaneous Emission Spectrum of a Four-level Atom Coupled to an Isotropic PBG Reservoir | |||
Li Jiang,Hanzhuang Zhang | |||
Physics 07 March 2008 | |||
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Abstract:The model of a four-level atom embedded in a double-band photonic crystal is adopted. The atomic transitions from the upper two levels to the lower two levels are assumed to be coupled by the isotropic PBG reservoir. The effects of quantum interferences and the splitting of lower level on the spontaneous emission spectrum of such a system are investigated in details. The new spontaneous lines resulting from quantum interferences and splitting of the lower level are analyzed. | |||
TO cite this article:Li Jiang,Hanzhuang Zhang. Quantum Interference Effects in Spontaneous Emission Spectrum of a Four-level Atom Coupled to an Isotropic PBG Reservoir[OL].[ 7 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19140 |
4. One-loop QCD corrections to the e+e-→ W+W+b-b- process at the ILC | |||
Guo Lei,Ma Wen-Gan,Zhang Ren-You,Wang Shao-Ming | |||
Physics 07 March 2008 | |||
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Abstract:We study the full contributions at the leading order(LO) and QCD next-to-leading order(NLO) to the cross section of the $e^+e^- \to W^+ W^- b\bar b$ process in the standard model(SM) at the ILC. In dealing the resonance problem we adopted the complex mass scheme in both tree-level and one-loop level perturbative calculations. Our numerical results show that the K-factor varies from $1.501$ to $0.847$ when $\sqrt{s}$ goes up from $360~GeV$ to $1.5~TeV$. We investigate the dependence of the LO and QCD NLO corrected cross sections of process $e^+e^- \to W^+ W^- b\bar b$ on colliding energy $\sqrt{s}$ and Higgs-boson mass. We also present the results of the LO and QCD NLO corrected distributions of the transverse momenta of final particles, and the invariant masses of $Wb$-, $b\bar b$- and $WW$-pair. | |||
TO cite this article:Guo Lei,Ma Wen-Gan,Zhang Ren-You, et al. One-loop QCD corrections to the e+e-→ W+W+b-b- process at the ILC[OL].[ 7 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19114 |
5. Realization of room temperature electroluminescence from the heterojunction device with n-ZnO/p-GaN structure | |||
TianPeng Yang,HuiChao Zhu,JiMing Bian,Jingchang Sun,Xin Dong,Baolin Zhang,Hongwei Liang,Xiangping Li,yongguo Cui,Guotong Du | |||
Physics 06 March 2008 | |||
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Abstract:The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg doped p-type GaN layer with a hole concentration of ~1017 cm-3 and a unintentionally doped n-type ZnO layer with an electron concentration of ~1018 cm-3. A distinct blue-violet electroluminescence with a dominant emission peak centered at ~415nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides. | |||
TO cite this article:TianPeng Yang,HuiChao Zhu,JiMing Bian, et al. Realization of room temperature electroluminescence from the heterojunction device with n-ZnO/p-GaN structure[OL].[ 6 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19077 |
6. The Structural and Electronic Properties of Si-doped Wurtzite AlN from First-Principles Calculations | |||
Long Run,Dai Ying,Guo Meng,Huang Baibiao | |||
Physics 24 January 2008 | |||
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Abstract:Donor impurity Si doping effects on structural and electronic properties of wurtzite AlN crystals were studied by means of density functional theory. Four Si substitutional and interstitial models were considered to manipulate the various Si-doped AlN. The calculated formation energies indicate that the substitutional Si is energetically favored in Al-rich growth conditions, and interstitial Si has large formation energy in both of N-rich and Al-rich conditions. The electronic structures demonstrate that there are two types of mechanisms for the redshift of photoluminescence. One is that the band gap width reduces due to Si3p states lowering the bottom of conduction band by Si substituting for Al, and the other is that some of Si3p gap states induced by Si substituting for N or by introducing interstitial Si. Based on the experimental results, the redshift phenomenon should ascribe to band to band transition. | |||
TO cite this article:Long Run,Dai Ying,Guo Meng, et al. The Structural and Electronic Properties of Si-doped Wurtzite AlN from First-Principles Calculations[OL].[24 January 2008] http://en.paper.edu.cn/en_releasepaper/content/18339 |
7. Electron resonance-transmission through a driven quantum well with spin-orbit coupling | |||
Zhang CunXi ,Wang Rui,Nie Yihang,Liang Jiuqing | |||
Physics 24 January 2008 | |||
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Abstract:We study the spin-dependent electron transmission through a quantum well driven by both dipole-type and homogeneous oscillating fields. The numerical evaluations show that Dresselhaus spin-orbit coupling induces the splitting of asymmetric Fano-type resonance peaks in the conductivity, in which the dipole modulation and the homogeneous modulation are equivalent. Therefore we predict that the dipole-type oscillation, which is more practical in the experimental setup, can be used to realize the tunable spin filters by adjusting the field oscillation-frequency and the amplitude as well. | |||
TO cite this article:Zhang CunXi ,Wang Rui,Nie Yihang, et al. Electron resonance-transmission through a driven quantum well with spin-orbit coupling[OL].[24 January 2008] http://en.paper.edu.cn/en_releasepaper/content/18328 |
8. Quantum Electrodynamics with arbitrary charge on noncommutative space | |||
Zhou WanPing ,Cai Shaohong ,Long ZhengWen | |||
Physics 11 January 2008 | |||
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Abstract:Using the Seiberg-Witten Map. We obtain a quantum electrodynamics on nonocommutative space, which has arbitrary charge and the gauge invariant is also kept at the leading order of theta. The one-loop divergence and Compton Scattering are reinvestigated. The noncommutative effect is much more remarkable then the ordinary nonocommutative quantum electrodynamics | |||
TO cite this article:Zhou WanPing ,Cai Shaohong ,Long ZhengWen . Quantum Electrodynamics with arbitrary charge on noncommutative space[OL].[11 January 2008] http://en.paper.edu.cn/en_releasepaper/content/17999 |
9. Physical properties of intergrowth cobalt oxide LixNayCoO2 | |||
Shuai Jiang,Zhi Ren,Guanghan Cao | |||
Physics 07 January 2008 | |||
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Abstract:Intergrowth-structured LixNayCoO2 exhibits an enhanced thermoelectric power at room temperature [Ren et al., Journal of Physics: Condensed Matter 18, L379 (2006)]. In this work, LixNayCoO2 ceramics with nominal composition x=0.45 and y=0.35 is studied by the measurement of resistivity, thermopower and magnetic susceptibility. Although the resistivity data show semiconductor-like behavior, the temperature dependence of thermopower indicates metallic character. This apparent controversy suggests that the grain interior is metallic while the grain boundary and/or grain surface is semiconducting. The magnetic susceptibility reveals very weak ferromagnetism below 23 K. Possible origin of this anomaly is discussed. | |||
TO cite this article:Shuai Jiang,Zhi Ren,Guanghan Cao. Physical properties of intergrowth cobalt oxide LixNayCoO2[OL].[ 7 January 2008] http://en.paper.edu.cn/en_releasepaper/content/17837 |
10. Theoretical study on laser cooling of solids | |||
Jia Youhua,Zhong Biao,Yin Jianping | |||
Physics 04 January 2008 | |||
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Abstract:A simple model is developed to study laser cooling of solids. First the condition of laser cooling of a solid is developed, and then by using some parameters of the Yb3+ ion, which is most widely used in laser cooling, we calculate the cooling power and the cooling efficiency. After that, in order to make a more precise analysis, the effect of fluorescent reabsorption, which is unavoidable in cooling process, is discussed using random walk model. Taking Tm3+ ion as an example, we get the average number of absorption events, find the change of quantum efficiency due to the reabsorption. Finally, we obtain the red-shift of the fluorescence wavelength and the requirement of the sample dimension. | |||
TO cite this article:Jia Youhua,Zhong Biao,Yin Jianping. Theoretical study on laser cooling of solids[OL].[ 4 January 2008] http://en.paper.edu.cn/en_releasepaper/content/17747 |
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