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1. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method | |||
Li Min,Lan Linfeng,Xu Miao,Xu hua,Luo Dongxiang,Xiao Peng,Yao Rihui,Peng Junbiao | |||
Electrics, Communication and Autocontrol Technology 04 February 2013 | |||
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Abstract:In this paper, thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one annealing step. The falling rate of this device was as high as 0.593 eV/V, showing that trap states in the channel were greatly reduced by the two-step-annealing process. | |||
TO cite this article:Li Min,Lan Linfeng,Xu Miao, et al. Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method[OL].[ 4 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4519284 |
2. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs | |||
Wang Wei,Sun Jianping,Gu Ning | |||
Electrics, Communication and Autocontrol Technology 06 June 2006 | |||
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Abstract:We use a quantum-mechanical model to study the gate tunneling current of Hf-based high-k dielectric films for nanoscale MOSFETs. The three-dimensional gate current component evaluation is performed by the traveling wave calculations for the thermionic emission, Fowler-Nordheim (FN) tunneling, and direct tunneling through the oxide barrier. For the two-dimensional gate current component originated from the subbands in the inversion layers, a transmission calculation is performed. Various Hf-based high-k structures and materials of interest have been examined and compared to access the reduction of gate current in these structures. Effects of nitrogen content, hafnium content, aluminum content, and interfacial layer (IL) on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content, aluminum content, and the composition of the IL. Our computational results are in very good agreement with experimental data. | |||
TO cite this article:Wang Wei,Sun Jianping,Gu Ning. Simulation and Analysis of Gate Current Through Hf-based High-k Structures for nanoscale MOSFETs[OL].[ 6 June 2006] http://en.paper.edu.cn/en_releasepaper/content/6965 |
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