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	1. Synthesis of large-size monolayer hexagonal BN film by low pressure CVD
	CAI Duanjun,WU Chenping
	Physics 13 November 2015
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:We report the large-size synthesis of atomic monolayer hexagonal boron nitride (h-BN) film on flexible Cu foil by low pressure chemical vapor deposition (CVD) method. The borazane powder was used as the precursor carried by mixed hydrogen/argon gases. By rolling the Cu foil substrate into cylindrical shape, wafer-scale monolayer h-BN film has been achieved in a size over 7 inch. With the aid of PMMA, the h-BN monolayer was perfectly transferred onto 4" Si wafer for characterization and further electrical applications. This technique could be transferred to thin film growth on any flexible substrates.
	TO cite this article:CAI Duanjun,WU Chenping. Synthesis of large-size monolayer hexagonal BN film by low pressure CVD[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661223


	2. The surface and photoluminescence properties of GaAs passivated by wet chemical method
	Chen Fang,Tang Jilong,Liu Guojun,Wei Zhipeng,Fang Dan,Gao Xian,Xu Zhikun,Fang Xuan,Ma Xiaohui,Wang Xiaohua
	Physics 22 July 2014
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	Abstract:The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH4)2S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH4)2S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH4)2S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications.
	TO cite this article:Chen Fang,Tang Jilong,Liu Guojun, et al. The surface and photoluminescence properties of GaAs passivated by wet chemical method[OL].[22 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604842


	3. A Wetting-Depth Model for Explanation of Wall-Climbing Phenomena of Superfluid Helium and General Liquids such as Water
	Xiaoen Wang
	Physics 26 December 2008
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	Abstract:The intermolecular attractive interactions between solid and liquid are considered. Based on fact that alkali metals, especially cesium, are incompletely wetted by superfluid helium II, here, a wetting-depth function is used to derive not only the limit between wetting and nonwetting but also a critical value between the spreading out indicating superfluidity and the complete wetting denoting the normal state of liquid. Observation of siphon-like transport of water defying gravity along fiber surface suggests the mechanism of the wall climbing and fountain effects of superfluid helium at molecular level, which is in agreement with a wealth of new observations in the past more than 15 years. Yet, this paper compares the validity of the wetting-depth model with the contact-angle method and concept of wetting coefficient.
	TO cite this article:Xiaoen Wang. A Wetting-Depth Model for Explanation of Wall-Climbing Phenomena of Superfluid Helium and General Liquids such as Water[OL].[26 December 2008] http://en.paper.edu.cn/en_releasepaper/content/26996

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