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	1. Hydrogen Production from Formaldehyde at Different pH Values by Popcorn-like Cu Microcrystals
	GAO Hong,LI Chunzhi,ZHANG Junying,WANG Mei
	Physics 24 May 2016
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	Abstract:Photocatalytic reforming of formaldehyde for hydrogen production over popcorn-like Cu microcrystals have been investigated and compared under different reaction conditions. In this work, we find that popcorn-like Cu microcrystals can catalyze hydrogen production from formaldehyde solution at various pH values rather than only in alkaline conditions as previously reported in the literature. Furthermore, the visible light irradiation efficiently enhances the hydrogen generation rate. A new plasmonic catalytic mechanism is proposed on the basis of the facts that the popcorn-like Cu microcrystals are photoexcited by the visible light due to plasmon resonance and the unpaired electrons immigrate to the surface of formaldehyde to induce the redox reaction. The alkaline condition is determined to be the appropriate condition for the reaction and the popcorn-like Cu microcrystals are very stable during the catalysis process. This study may provide a new insight that the reforming reaction of formaldehyde for hydrogen production not only occurs in alkaline solutions, but also in neutral and acidic conditions, with light irradiation further improving the efficiency.
	TO cite this article:GAO Hong,LI Chunzhi,ZHANG Junying, et al. Hydrogen Production from Formaldehyde at Different pH Values by Popcorn-like Cu Microcrystals[OL].[24 May 2016] http://en.paper.edu.cn/en_releasepaper/content/4691352


	2. Enhanced ferroelectric and photovoltaic outputs of Cr3+ doped Pb(Zr0.2Ti0.8)O3 films
	Gu Shoulin,Liu Kai,Wang Xiaofeng,Zheng Fengang
	Physics 14 April 2016
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	Abstract:In this paper, we studied the effects on microstructure, ferroelectric and photovoltaic property of different Cr3+ dopants concentrations for Pb(Zr0.2Ti0.8)O3 (PCZT) ferroelectric films. Our experimental results showed that Cr3+ ions, as the accepters substituting for Ti4+ ions, decreased the remnant polarization (2Pr) when Cr3+ concentration was less than about 1% (molar ratio). However, Cr3+ ions were the donors substituting for Pb2+ ions and 2Pr was improved greatly when Cr3+ concentration was more than about 1%. The ferroelectric and photovoltaic outputs of PCZT films were optimized.When the concentration of Cr3+ ions was about 3%, the value of 2Pr reached 124.44 μC/cm2, which was about 2.8 times compared with that of PZT film (no Cr3+ dopants, 45.15 μC/cm2). Accordingly, the photovoltaic output of PCZT film (Cr3+ dopants 3%) was about 5 times compared with that of PZT film.
	TO cite this article:Gu Shoulin,Liu Kai,Wang Xiaofeng, et al. Enhanced ferroelectric and photovoltaic outputs of Cr3+ doped Pb(Zr0.2Ti0.8)O3 films[OL].[14 April 2016] http://en.paper.edu.cn/en_releasepaper/content/4683475

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	3. High performance photovoltaic cells, phototransistors and self-powered photodetectors based on multilayered MoS2
	ZHONG Xuying,ZHOU Weichang
	Physics 15 January 2016
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	Abstract:An optoelectronic diode based on a p-n junction is one of the most fundamental device building blocks with extensive applications. Compared with graphene, layered transition-metal dichalcogenides demonstrate promising applications in novel valley-electronics and opto-electronics. Here we reported the fabrication and optoelectronic properties of a single multilayer MoS2 sheet. Our results indicate that the thin MoS2 shows a linear transport property while thick MoS2 shows diode characteristics with well defined current rectification behavior. We assign that the rectification behavior is due to the formation of a p-n junction in the single multilayer MoS2 piece. The intrinsic defects in MoS2 can change the conduction polarity, such as: sulfur vacancies contribute to the n-type behavior while sulfur interstitials and molybdenum vacancies contribute to the p-type conduction. The variation of intrinsic defects and stoichiometry is obvious over the micrometer range in thick MoS2. The fabricated MoS2 transistors were assessed under bias and gate voltage modulation when exposed to red, green and UV light under vacuum. The multilayer MoS2 shows dominant p-type behavior under dark conditions while its shows dominant n-type conduction under light illumination. In addition, this MoS2 phototransistor shows an evident photovoltaic effect. The open-circuit voltage (Voc) and short-circuit current (Isc) are observed to be 0.48 V and 494 nA under red illumination. These results demonstrate the potential application of a single multilayer MoS2 sheet in optoelectronics, such as light-emitting diodes (LEDs), field-effect photovoltaic cells and photodetectors.
	TO cite this article:ZHONG Xuying,ZHOU Weichang. High performance photovoltaic cells, phototransistors and self-powered photodetectors based on multilayered MoS2[OL].[15 January 2016] http://en.paper.edu.cn/en_releasepaper/content/4675992


	4. High-performance photodetectors based on novel layered GaSe0.5Te0.5 nanoflakes
	ZHONG Xuying,ZHOU Weichang
	Physics 14 January 2016
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	Abstract:Layered two-dimensional (2D) gallium monochalcogenides emiconductor crystals hold great promises for potential electronics and photonics application. In this paper, we reported the optoelectronic properties of 2D GaSe0.5Te0.5 nanoflakes. The GaSe0.5Te0.5 nanoflakes were synthesized by chemical vapor deposition (CVD) and characterized by SEM, TEM, Raman and PL spectra, which demonstrate the high crystal quality of as-prepared nanoflakes. The photodetector based on GaSe0.5Te0.5 nanoflake shows fast response time, high reversibility and stability both in air and vacuum. The photo-responsivity is up to 22AW-1 under illumination of 532nm light. More interesting, the GaSe0.5Te0.5 photodetector demonstrate extended light response range, as compared with pure GaSe. The photoresponsivity is 13AW-1 for 650nm red light. The present results suggest strongly that the 2D GaSe0.5Te0.5 nanoflakes hold extensive applications in next-generation photodetection and photosensing nanodevices.
	TO cite this article:ZHONG Xuying,ZHOU Weichang. High-performance photodetectors based on novel layered GaSe0.5Te0.5 nanoflakes[OL].[14 January 2016] http://en.paper.edu.cn/en_releasepaper/content/4675949


	5. Synthesis, Structure, and Electrochemical Properties of VOx Nanosheets Prepared from V2O5 and Carbon Aerogels
	YANG Huiyu,GAO Guohua,WU Guangming
	Physics 20 February 2014
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	Abstract:The VOx nanosheets cathode materials for Li-ion battery have been synthesized from V2O5 powders and carbon aerogels via sol-gel and hydrothermal methods. The carbon aerogels are produced through supercritical ?uid drying and post carbonization process. The component of VOx nanosheets is characterized to be V3O7oH2O which consists of V2O5 and VO2 units by Raman and XRD measurement. The SEM results show that ultra-uniform nanosheets of V3O7oH2O were prepared with a length of more than 20 μm and a width of nearly 2 μm. Cathodes properties of V3O7oH2O nanosheets were further evaluated by cyclic voltammetry and galvanostatic charge-discharge cycling up to 100 cycles. The electrochemical tests reveal that these cathode nanomaterial possesses good charge/discharge cycling stability and excellent high-rate performance even at the high current density of 12.8Aog-1.
	TO cite this article:YANG Huiyu,GAO Guohua,WU Guangming. Synthesis, Structure, and Electrochemical Properties of VOx Nanosheets Prepared from V2O5 and Carbon Aerogels[OL].[20 February 2014] http://en.paper.edu.cn/en_releasepaper/content/4586140


	6. The binding energies of H/H2 inside and outside the (5,5) welding carbon nanotube
	Xu Huanhuan,Li Huiran,Cheng Xinlu,Zhang Hong
	Physics 12 January 2014
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	Abstract:In this work, the binding energies of H/H2 both inside and outside the (5, 5) single-walled carbon nanotube (SWCNT) and welding carbon nanotube T (5, 5) are investigated by using density functional theory (DFT). The effect of the orientations and locations of hydrogen atom and molecule on the binding energy are discussed. During the calculating process, the H atom upon a carbon atom (top) has the largest binding energy, while the H2 which is placed perpendicular to the wall upon the center of a hexagon of carbon atoms inside the carbon nanotube is predicted to be the most stable state. The binding energies of H atom inside the SWCNT (5, 5) are in the range of -0.35 - -0.69eV, while the corresponding values of the T (5, 5) are in the range of -0.95 - -1.27eV. The binding energies of H2 molecule inside the SWCNT (5, 5) are in the range of -0.15 - -0.17eV, while the corresponding results for the T (5, 5) are in the range of -0.31 - -0.38eV. It can be seen that the binding energy of H/H2 in the T (5, 5) is obviously larger than that in the SWCNT (5, 5). This result means that the welding structure is suitable for hydrogen storage.
	TO cite this article:Xu Huanhuan,Li Huiran,Cheng Xinlu, et al. The binding energies of H/H2 inside and outside the (5,5) welding carbon nanotube[OL].[12 January 2014] http://en.paper.edu.cn/en_releasepaper/content/4581959


	7. Effect of Co Doping on the Transport Properties of La0.1Bi0.9FeO3 Ceramics
	WANG Shouyu,LIU Weifang
	Physics 10 December 2012
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	Abstract:The effects of cobalt doping on the electrical conductivity of La0.1Bi0.9Fe1-xCoxO3 (LBFCO, x=0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 oC and 80 oC). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.
	TO cite this article:WANG Shouyu,LIU Weifang. Effect of Co Doping on the Transport Properties of La0.1Bi0.9FeO3 Ceramics[OL].[10 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4502500


	8. Band structures for Ge3N4 polymorphs studied by DFT-LDA and GW methods
	GAO ShangPeng,CAI Guanghua,XU Yuan
	Physics 26 August 2012
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	Abstract:Ab initio band structures for alpha-Ge3N4, beta-Ge3N4, and gamma-Ge3N4 are calculated using density functional theory with local density approximation. Band energies of special k-points in the Brillouin zone are corrected using the GW method to accurately predict the band gap energy. The γ-Ge3N4 has a direct band gap of 3.462 eV, indicting promising applications as a wide band gap semiconductor for short wavelength optoelectronics.
	TO cite this article:GAO ShangPeng,CAI Guanghua,XU Yuan. Band structures for Ge3N4 polymorphs studied by DFT-LDA and GW methods[OL].[26 August 2012] http://en.paper.edu.cn/en_releasepaper/content/4487813


	9. Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory
	Chen Gang,Gao Shang-Peng
	Physics 23 August 2012
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	Abstract:Structures of heptazine based graphitic C3N4 and S doped graphitic C3N4 are investigated by density functional theory with semi-empirical dispersion-correction for weak long-range interaction between layers. Corrugated structure is more energetically favorable for both graphitic C3N4 and S doped graphitic C3N4. S doptant is prone to substitute the N atom bonded with only two nearest C atoms. Band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and could improve the electroconductibility and photocatalytic activity of graphitic C3N4.
	TO cite this article:Chen Gang,Gao Shang-Peng. Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory[OL].[23 August 2012] http://en.paper.edu.cn/en_releasepaper/content/4487636


	10. Characteristics of the composite films formed by CdTe electrodeposited on the ordered porous Al2O3
	Bo Hu,Guoguang Rong
	Physics 14 March 2012
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	Abstract:Highly ordered polycrystalline CdTe nanowire arrays have been synthesized by direct (dc) electrodeposition in anodic alumina menbrane(AAM) at room temperature from solution containing CdCl2,NaNO3,and HTeO2+ formed by dissolving Te powder in 5 M HNO3.These nanowires have uniform diameters of about 60 nm,which correspond to the pore size of the membranes used.Electron microscope results show that the atomic composition of Cd and Te is very close to a 1:1 stoichiometry.A mechanism for the nanowires growth is suggested.
	TO cite this article:Bo Hu,Guoguang Rong. Characteristics of the composite films formed by CdTe electrodeposited on the ordered porous Al2O3[OL].[14 March 2012] http://en.paper.edu.cn/en_releasepaper/content/4471010

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