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	1. Generation of highly efficient, nanosecond Ince-Gaussian beams in Cr,Nd:YAG microchip lasers
	DONG Jun,Ma Jian,REN Yingying,Xu Guozhang,Kaminskii A. Alexander
	Electrics, Communication and Autocontrol Technology 23 July 2012
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	Abstract:Direct generation of higher-order Ince-Gaussian (IG) beams from laser-diode end-pumped Cr,Nd:YAG self-Q-switched microchip laser was achieved with high efficiency and high repetition rate. Average output power over 2 W was obtained with absorbed pump power of 8.2 W, corresponding optical-to-optical efficiency of 25% was achieved. Various IG modes with nanosecond pulse width and peak power of over 2 kW level were obtained in laser-diode pumped Cr,Nd:YAG microchip lasers under different pump power levels by applying titled, large area pump beam. The effect of the inversion population distribution induced by the titled pump beam and nonlinear absorption of Cr4+-ions on the oscillation of higher-order IG modes in Cr,Nd:YAG microchip lasers were addressed. The effect of higher-order IG mode oscillation on the laser performance of Cr,Nd:YAG microchip lasers was also discussed.
	TO cite this article:DONG Jun,Ma Jian,REN Yingying, et al. Generation of highly efficient, nanosecond Ince-Gaussian beams in Cr,Nd:YAG microchip lasers[OL].[23 July 2012] http://en.paper.edu.cn/en_releasepaper/content/4485493


	2. Temperature-Insensitive Pressure Sensor Based on All-Fused-Silica Extrinsic Fabry-Pérot Optical Fiber Interferometer
	Wenhua WANG,Qingxu YU,Fang LI,Xinlei ZHOU,Xinsheng JIANG
	Electrics, Communication and Autocontrol Technology 13 December 2011
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	Abstract:A novel high sensitivity pressure sensor based on all-fused-silica Extrinsic Fabry-Pérot optical fiber interferometer, which exhibits extreme low temperature dependence, has been developed. The sensor can excellently operate with a sensitivity of 5.18nm/KPa (0.75nm/psi), a resolution of 38Pa (0.005psi). Due to epoxy-free bonding and reserving a vent hole between the fiber and the ferrule in the process of laser heating fusion bonding, the temperature dependence is significantly reduced to the 0.011nm/℃, and pressure measurement error is 0.021KPa/℃ (0.003psi/℃). The operating point doesn't shift with backpressure change due to the vent hole. The sensor may be suitable for liquid measurement, environmental monitoring and other industrial applications in harsh environment.
	TO cite this article:Wenhua WANG,Qingxu YU,Fang LI, et al. Temperature-Insensitive Pressure Sensor Based on All-Fused-Silica Extrinsic Fabry-Pérot Optical Fiber Interferometer[OL].[13 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4455359


	3. Response properties of photovoltaic detectors irradiated under femtosecond pulses
	Dong Zhiwei,Su Shuheng,Lv Kun,Xia Yuanqin,Chen Deying
	Electrics, Communication and Autocontrol Technology 15 November 2011
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	Abstract:Output properties of Si based photovoltaic detectors were researched applying femtosecond pulses with different repetition rates. The output properties of these detectors with different load conditions were also researched. The linear response domain of PIN detector with external reverse bias voltage was found quite large for different femtosecond pulses repetition rates. The sensitivity of PN detector was found much higher when applying external reverse bias voltage with femtosecond repetition rate 76 MHz. The saturation effect of PN detector was attributed to the slow response speed of the photovoltaic detector.
	TO cite this article:Dong Zhiwei,Su Shuheng,Lv Kun, et al. Response properties of photovoltaic detectors irradiated under femtosecond pulses[OL].[15 November 2011] http://en.paper.edu.cn/en_releasepaper/content/4450059


	4. Modified model for four-wave mixing-based wavelength conversion in silicon micro-ring resonators
	LI Zhiqiang,GAO Shiming
	Electrics, Communication and Autocontrol Technology 22 January 2011
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	Abstract:In this paper, A modified model for wavelength conversion based on four-wave mixing (FWM) in a silicon micro-ring resonator is presented. The nonlinear phase shifts caused by self-phase modulation and cross-phase modulation are also taken into account in the present theoretical analysis besides the linear propagation loss, the nonlinear losses caused by two-photon absorption and free-carrier absorption. Analysis shows that the nonlinear phase shifts will cause different red shifts for the pump and signal (or converted) resonant wavelengths, and consequently an additional wavelength difference between the signal transmission dip and the efficiency peak, which will increase/decrease the conversion efficiency of the signal channel far from/near the pump. The conversion efficiency and the conversion peak width of each signal channel are both affected by the micro-ring radius and coupling coefficient. A broader conversion peak width can be obtained by using a micro-ring resonator with a smaller Q factor.
	TO cite this article:LI Zhiqiang,GAO Shiming. Modified model for four-wave mixing-based wavelength conversion in silicon micro-ring resonators[OL].[22 January 2011] http://en.paper.edu.cn/en_releasepaper/content/4407155

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