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Home > Papers > Condensed-Matter-Physics

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	1. Spin-dependent shot noise in diluted magnetic semiconductor/semiconductor heterostructures with a nonmagnetic barrier
	WU Shuang,GUO Yong
	Physics 17 December 2013
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	Abstract:We investigate quantum size effect on the spin-dependent shot noise in the diluted magnetic semiconductor(DMS)/semiconductor heterostructure with a nonmagnetic semiconductor (NMS) barrier in the presence of external magnetic and electric fields. The results demonstrate that the NMS barrier plays a quite different role from the DMS layer in the electron transport process. It is found that spin-down shot noise shows relatively regular oscillations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically. However, as the width of NMS layer increases, the spin-down shot noise displays irregular oscillations at first and then decreases while the spin-up shot noise decreases at a quite different rate. The results indicate that the shot noise can be used as a sensitive probe in detecting material type and its size.
	TO cite this article:WU Shuang,GUO Yong. Spin-dependent shot noise in diluted magnetic semiconductor/semiconductor heterostructures with a nonmagnetic barrier[OL].[17 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4575893


	2. A controllable valley polarization in Graphene
	LIU Yang,SONG Juntao,LI Yuxian,LIU Ying,SUN Qingfeng
	Physics 27 March 2013
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	Abstract:The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.
	TO cite this article:LIU Yang,SONG Juntao,LI Yuxian, et al. A controllable valley polarization in Graphene[OL].[27 March 2013] http://en.paper.edu.cn/en_releasepaper/content/4533066

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	3. The Zeeman Splitting Effect on the Temperature Induced Spin Relaxation in Organic Semiconductors
	YIN Sun
	Physics 19 December 2012
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	Abstract:The Zeeman energy splitting or the external magnetic field effect on the temperature induced spin relaxation in organic semiconductors is investigated. By numerical solving the Liouville equations of a four-level system with energy level fluctuation, we show that the relaxation processes of spin singlet state of a coupled polaron pair are not affected by the Zeeman splitting. The magnetic field has small effect on the spin relaxation of T0 spin triplet state. But for the other spin triplet states with parallel spins, the relaxation processes will have periodic oscillation around the saturation value in present of magnetic field. The period and the amplitude of oscillation depend on the values of Zeeman splitting. The application of the model on understanding the organic magnetic field effect is also dicusssed.
	TO cite this article:YIN Sun. The Zeeman Splitting Effect on the Temperature Induced Spin Relaxation in Organic Semiconductors[OL].[19 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4506317


	4. Rectifying characteristics of Bi2Sr2Co2Oy/Si heterojunction
	Yan Guoying,Bai Zilong,Wang Shufang,Liu Fuqiang,Wang Jianglong,Yu Wei,Fu Guangsheng
	Physics 13 December 2012
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	Abstract:A Bi2Sr2Co2Oy/Si heterojunction has been obtained by growing a layer of p-type Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition, and its rectifying properties were studied in a wide temperature range from 20 to 300 K. The heterojuction exhibited a perfect rectifying characteristic and its transport mechanism under the forward bias can be attributed to a trap-filled limit conduction mechanism via the oxygen defects in the Bi2Sr2Co2Oy film and the interface defects of the heterojunction. The results demonstrated the potential application of a Bi2Sr2Co2Oy-based heterojunction in the electronic devices.
	TO cite this article:Yan Guoying,Bai Zilong,Wang Shufang, et al. Rectifying characteristics of Bi2Sr2Co2Oy/Si heterojunction[OL].[13 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4503744


	5. Synthesis and photoluminescence properties of CTAB-encapsulated semiconductor quantum dots
	DAI Dejian,GUO Xiaoxiao,FAN Jiyang
	Physics 07 December 2012
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	Abstract:The multilayered cetyltrimethylammonium bromide (CTAB) vesicle centered on one or a couple of colloidal SiC quantum dots (QDs) was synthesized. The Coulomb attraction force between the negatively charged surface of the QD and the positively charged ionized CTAB molecules drives formation of the novel multilayered vesicles via self-assembly. The CTAB vesicles show near-UV photoluminescence which is enhanced with respect to the individual CTAB molecules. This novel synthesis method can be generalized to synthesize a large group of diverse QD/vesicle core/shell structures.
	TO cite this article:DAI Dejian,GUO Xiaoxiao,FAN Jiyang. Synthesis and photoluminescence properties of CTAB-encapsulated semiconductor quantum dots[OL].[ 7 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4501647


	6. Temperature Induced Spin Relaxation in Organic Semiconductors
	YIN Sun
	Physics 30 November 2012
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	Abstract:Spin relaxation due to energy level fluctuation in organic semiconductors is investigated by solving the Liouville equation of a two-level system with diagonal Hamiltonian elements being described by stochastic processes. When the polaron pair situates on one molecule, or an exciton, no spin relaxation is possible. In the opposite case when the coupled polaron pair distributes in two neighboring molecules, the relaxation occurs between spin singlet and one of the spin triplet states but not between spin triplet states.
	TO cite this article:YIN Sun. Temperature Induced Spin Relaxation in Organic Semiconductors[OL].[30 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4499446


	7. Enhanced dielectric and magnetic properties in Ru and La co-doped BiFeO3 ceramics
	LIU Weifang,GONG Yufei
	Physics 18 November 2012
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	Abstract:Multiferroic ceramics Bi0.9La0.1Fe1-xRuxO3 (x = 0%, 1% and 3%) were prepared using a solid-state reaction process. The structural transformation from rhombohedral to pseudocubic was confirmed in the Ru-doped samples via x-ray diffraction investigation, and the improved dielectric properties are ascribed to the morphotropic phase boundary and decreased oxygen defects existing in the Ru-substituted samples. The enhancement of magnetization is interpreted by the increased Fe3+ ions and the formation of a local 'ferrimagnetic' structure in the Ru-doped samples.
	TO cite this article:LIU Weifang,GONG Yufei. Enhanced dielectric and magnetic properties in Ru and La co-doped BiFeO3 ceramics[OL].[18 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4494763


	8. Notable Influence of Orthorhombic-Tetragonal Phase Transition on Microwave Dielectric Dispersion in BaTiO3 Ceramic
	ZHANG Jialiang,HAO Wentao,ZHENG Peng,TAN Yongqiang,JI Pengfei,WANG Chunlei
	Physics 16 November 2012
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	Abstract:Temperature-stable, frequency-independent and low-loss dielectric properties are usually essential for a high-permittivity ferroelectric material to be practically applied in microwave devices. BaTiO3 ceramics are a type of important ferroelectric material in the viewpoints of both fundamental studies and technological applications. However, investigations of the microwave dielectric dispersion below room temperature have been rarely carried out so far. In this study, the temperature evolution of dielectric dispersion was examined for a coarse-grained BaTiO3 ceramic in the frequency range from 40 Hz to 1 GHz and over the temperature interval between -50 and 180 C, which thus includes the orthorhombic-tetragonal polymorphic phase transition and covers the large part of common usage temperature region. An important physical phenomenon that the phase transition has a notable influence on the microwave dielectric dispersion has been clearly disclosed. The dielectric permittivity ε' shows a maximum whereas the characteristic frequency fr exhibits a minimum in the vicinity of orthorhombic-tetragonal phase transition temperature. In addition, large difference in fr is observed between the heating process and the cooling process in the tetragonal phase. It is considered that the experimentally found phenomenon can be explained by the previously suggested mechanism of the emission of elastic shear waves from ferroelastic domain walls.
	TO cite this article:ZHANG Jialiang,HAO Wentao,ZHENG Peng, et al. Notable Influence of Orthorhombic-Tetragonal Phase Transition on Microwave Dielectric Dispersion in BaTiO3 Ceramic[OL].[16 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4496187


	9. Bimetallic nanostructures with magnetic and noble metals and their physicochemical applications
	DUAN Sibin,WANG Rongming
	Physics 08 November 2012
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	Abstract:Bimetallic nanomaterials consisting of magnetic metals and noble metals have attracted much interest for their promising potentials in the fields such as magnetic sensors, catalysts, optical detection and biomedical applications. Bimetallic nanomaterials synthesized by wet-chemical methods with different architectures including nanoparticles, nanowires or nanotubes and their assemblies are summarized in this review. The particular properties of bimetallic nanomaterials, especially their magnetic, catalytic and optical properties, are presented. The advance in electron microscopy makes it possible to understand the nanostructural materials at much higher level than before, which helps to disclose the relationship between the microstructures and properties qualitatively and quantitatively.
	TO cite this article:DUAN Sibin,WANG Rongming. Bimetallic nanostructures with magnetic and noble metals and their physicochemical applications[J].


	10. FORC diagrams of Magnetic perpendicular recording media
	Yin Jinhua,Chen Jingsheng,Wu Lianjun
	Physics 07 October 2012
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	Abstract:First Order Reversal Curve (FORC) diagrams have been investigated in perpendicular media. Our samples include Co/Pd multilayer and FePt films with different α (M-H loop slope parameter, α = 4α (dM/dH) at H=Hc). α can be used to characterize the exchange coupling between the grains in perpendicular media. It is found that the FORC diagrams of perpendicular media with strong exchange coupling are quite different from that of perpendicular media with weak exchange coupling. Because the FORC diagrams can separate the distributions of magnetic phases with different magnetic properties, we expect the FORC diagram is a possible method for us to investigate separately the magnetic properties of different magnetic phases in one sample. We compared our FORC diagram results with XPS and magnetization decay measurement.
	TO cite this article:Yin Jinhua,Chen Jingsheng,Wu Lianjun. FORC diagrams of Magnetic perpendicular recording media[OL].[ 7 October 2012] http://en.paper.edu.cn/en_releasepaper/content/4491156

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