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	1. Photonic crystal fiber based high-temperature fiber-optic Fabry-Perot interferometric sensors
	DING Wenhui,JIANG Yi,LIU Yuewu,WANG Zhen
	Electrics, Communication and Autocontrol Technology 04 March 2014
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	Abstract:A photonic crystal fiber (PCF) based high-temperature fiber-optic Fabry-Perot interferometric sensor is proposed and experimentally demonstrated. The sensor head is a Fabry-Perot cavity manufactured with a short section of endless single-mode photonic crystal fiber (ESM PCF). The interferometric spectrum of the Fabry-Perot interferometer is collected by a charge coupled device (CCD) linear array based micro spectrometer. A high-resolution demodulation algorithm is used to interrogate the peak wavelengths. Experimental results show that the temperature range of 1200℃ and the temperature resolution of 1 ℃ are achieved.
	TO cite this article:DING Wenhui,JIANG Yi,LIU Yuewu, et al. Photonic crystal fiber based high-temperature fiber-optic Fabry-Perot interferometric sensors[OL].[ 4 March 2014] http://en.paper.edu.cn/en_releasepaper/content/4588751


	2. Modeling and Characterization of On-Chip Interconnects
	YIN Wenyan,ZHAO Wensheng
	Electrics, Communication and Autocontrol Technology 27 December 2013
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	Abstract:In this article, one distributed circuit model for the on-chip single interconnect will be introduced at first, where all the lumped elements are frequency-independent and can be directly obtained from its geometrical and physical parameters. This ensures proper scalability of the model parameters because no optimization tuning or fitting for them is involved. Some popular and low-cost techniques, such as patterned ground shield (PGS) structures for suppressing the substrate loss of silicon substrate at high frequencies and differential signal transmission are also addressed here. Then, electromagnetic modeling of on-chip coupled (a)symmetrical interconnects will be performed, including all distributed parameters. The average power handling capability (APHC) of on-chip interconnects and even thin-film microstrip lines (TFML) are also addressed here. Finally, the electrothermal analysis of multilevel interconnects under electrostatic discharge (ESD) stress will be reported using the time-domain FEM.
	TO cite this article:YIN Wenyan,ZHAO Wensheng. Modeling and Characterization of On-Chip Interconnects[OL].[27 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4577445

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	3. Simulation of In2S3 /Cu(In,Ga)Se2 thin-film solar cells with the interfacial layer
	SUN Lin,HE Jun
	Electrics, Communication and Autocontrol Technology 23 December 2013
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	Abstract:The performance of Cu(In,Ga)Se2 solar cells with In2S3 buffer layers and NaχCu1-χIn5S8 interfacial layers between buffer and absorber layers has been modeled and simulated using the AMPS-1D simulation software. The influences of the different band gap of In2S3 and the presence of NaχCu1-χIn5S8 on the device performance are investigated in detail. The results suggest that the suitable band gap of In2S3 should be in the range from 2.6 to 2.9 eV as opposed to 2.1e V for pure β-In2S3, and NaχCu1-χIn5S8 with high Cu contents lead to the significant deterioration of device performance. The responsible mechanisms for these results are also discussed.
	TO cite this article:SUN Lin,HE Jun. Simulation of In2S3 /Cu(In,Ga)Se2 thin-film solar cells with the interfacial layer[OL].[23 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4574618


	4. Metamaterial Absorber with Active Frequency Tuning in Microwave Frequency Band
	Hao Yuan,Junming Zhao,Yijun Feng,Bo Zhu
	Electrics, Communication and Autocontrol Technology 10 December 2013
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	Abstract:This paper presents the design, fabrication, and measurement of an active frequency tunable metamaterial absorber in microwave frequency band. The unit cell of the metamaterial absorber consists of a metallic strip on the top layer of the fully grounded dielectric substrate, with a varactor loaded at the slit in the middle of the central strip. Simulation and measurement results show that by tuning the bias voltage applied on the varactors, the peak absorption frequency can be tuned about 0.44 GHz with the peak absorption greater than 95% at X band. Field analysis reveals that the unit cell of the absorber works as the microstrip resonator which exhibits matched input resistance to the incident waves.
	TO cite this article:Hao Yuan,Junming Zhao,Yijun Feng, et al. Metamaterial Absorber with Active Frequency Tuning in Microwave Frequency Band[OL].[10 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4573539


	5. Quasi-two-dimensional subthreshold voltage model for supra-deep-submicrometer MOSFET
	Shen Jing,Ke Daoming,Zhou Shaoyang,Xia Dan
	Electrics, Communication and Autocontrol Technology 26 February 2013
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	Abstract:A new analytical quasi-two-dimensional surface potential model for short-channel MOSFET is presented in the paper. In this model, one-dimensional differential equation of the potential for the channel depletion layer can be derived by applying Gauss's law along the landscape of the channel depletion layer, the effect of the source and drain potential on the thickness of the channel depletion layer have been taken into account. The realationship between the potential and the thickness of the channel depletion layer can be obtained by solving the equation and the threshold voltage can be given by the thickness of the depletion layer we have obtained .we can verify the accuracy of this model by using the MEDICI software to simulate the MOSFET with different parameters, finally the results between simulation and calculations are in good agreement.
	TO cite this article:Shen Jing,Ke Daoming,Zhou Shaoyang, et al. Quasi-two-dimensional subthreshold voltage model for supra-deep-submicrometer MOSFET[OL].[26 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4510954


	6. Simultaneous growth mechanism of ZnO microwires and nanotetrapods by a double-stream CVD
	Ma Jinxue,Zhang Heqiu,Sun Kaitong,Qiu Yu,Hu Lizhong
	Electrics, Communication and Autocontrol Technology 21 February 2011
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	Abstract:As fundamental materials for semiconductor devices, low dimensional structures of ZnO have attracted extensive research interest. Ultralong ZnO microwires (MWs) and ZnO nanotetrapods (NTs) have been synthesized simultaneously in different growth regions via a novel double-stream growth chemical vapor deposition (CVD) method. The morphology of ZnO MWs and NTs was investigated by the scanning electron microscopy (SEM). Ultralong ZnO MWs with a perfect hexagonal morphology were formed on the quartz tube in the upstream growth region, and ZnO NTs were deposited on the substrate in the downstream growth region. The novel CVD method is attributed to the special gas flow and the tem-perature distribution in the small quartz tube (SQT). By using the vapor-solid (VS) growth mode and a backflow growth model, the growth mechanism of such unique double-stream growth phenomenon was discussed.
	TO cite this article:Ma Jinxue,Zhang Heqiu,Sun Kaitong, et al. Simultaneous growth mechanism of ZnO microwires and nanotetrapods by a double-stream CVD[OL].[21 February 2011] http://en.paper.edu.cn/en_releasepaper/content/4411434


	7. Design and Simulation of Novel Millimeter-Wave MEMS Transmission Lines
	Zhou Yalin
	Electrics, Communication and Autocontrol Technology 16 November 2010
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	Abstract:The design and development of novel microelectromechanical systems' (MEMS) coplanar waveguide (CPW) transmission lines, using microshield and groove, are presented in the paper to operate between 5-60 GHz. The quasi-static capacitances of CPW are calculated using the conformal mapping technique to express the propagation properties, i.e., the characteristic impedance and effective permittivity. Simulation results have shown a considerable loss reduction to levels that compare favorably with the conventional CPW. These transmission lines can be widely used in the development of phase shifters, filters, and antennas, because of their advantages in loss reduction and improvement in the performance.
	TO cite this article:Zhou Yalin. Design and Simulation of Novel Millimeter-Wave MEMS Transmission Lines[OL].[16 November 2010] http://en.paper.edu.cn/en_releasepaper/content/4391948


	8. A Novel Two-state filter switched between LPF and BPF based on CPW transmission line with RF MEMS Switch
	Zhu Huazhang,Huang Jianming
	Electrics, Communication and Autocontrol Technology 27 October 2010
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	Abstract:In this paper, a novel switchable filter which can alternate between low-pass filter (LPF) and band-pass filter (BPF) is proposed, based on the micro-electromechanical systems' (MEMS) capacitive-contact switch on coplanar waveguide (CPW) transmission line. The novel design is constructed using electromagnetic band-gap (EBG) structures and the combination between the MEMS switch and the coupled slot of CPW signal line. When the MEMS capacitive-contact switch stays with up-state, the EBG BPF is obtained with the resonant frequency of 15.9GHz and the bandpass frequency ranged from 2.5 to 28.3GHz. When the MEMS capacitive-contact switch is pulled down by DC bias voltage, an EBG LPF is yielded with 3dB cut-off frequency is 28.1GHz. The MEMS capacitive-contact switch is applied as the transformer between LPF and BPF using a cantilever beam.
	TO cite this article:Zhu Huazhang,Huang Jianming. A Novel Two-state filter switched between LPF and BPF based on CPW transmission line with RF MEMS Switch[OL].[27 October 2010] http://en.paper.edu.cn/en_releasepaper/content/4389646


	9. Design of a Miniaturization Transceiver Based on TH7122
	Zhao ChunYuan,Cai JingYe
	Electrics, Communication and Autocontrol Technology 16 March 2007
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	Abstract: In wireless communication domain, miniaturization and low power dissipation of the terminal are always the objects .The paper shows a design of wireless transceiver system.The first, introduces the characteristic of RF IC TH7122, analyses the function and the principle.Then shows how to design a wireless transceiver system based on TH7122,and the debugging process and the result.
	TO cite this article:Zhao ChunYuan,Cai JingYe. Design of a Miniaturization Transceiver Based on TH7122[OL].[16 March 2007] http://en.paper.edu.cn/en_releasepaper/content/11471

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