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	1. Possibility of superradiant phase transitions in coupled two-level atoms
	Tao Liu,Yu-Yu Zhang,Qing-Hu Chen,Ke-Lin Wang
	Physics 10 October 2014
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	Abstract:Although the oscillator strength sum rule forbids the phase transition in ideal non-interacting two-level atoms systems, we present the possibility of the quantum phase transition in the coupled two-level atoms in a cavity. The system undergoes the superradiant phase transition in the thermodynamics limit and this transition is account for the atom-atom attractive interaction, exhibiting a violation of the sum rule. The bosonic coherent state technique has been adopted to locate the quantum critical point accurately in the finite-size system. We predict the existence of the superadiant phase transition as the number of atoms increases, satisfying all the constraints imposed by the sum rule.
	TO cite this article:Tao Liu,Yu-Yu Zhang,Qing-Hu Chen, et al. Possibility of superradiant phase transitions in coupled two-level atoms[OL].[10 October 2014] http://en.paper.edu.cn/en_releasepaper/content/4612964


	2. Quantum Correlations in Two Interacting Atom Ensembles
	Zhang Yu-Yu, Chen Wang
	Physics 30 September 2014
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	Abstract:The power-law scaling behaviors of the quantum discordand the scaled concurrence are presented in two coupledatom ensembles, which exhibit the Dicke-like quantum phase transition. In the super-excitation phase, the quantum discord reaches its maximum beyond the critical point and then decreases monotonically, which is ascribed to the double-degenerated ground state in the strong coupling limit. However, the scaled concurrence exhibits the maximum atomic quantum entanglement at the critical point. Moreover, we find that the persistence of thequantum discord is suppressed by different asymmetric effects in the super-excitation phase.
	TO cite this article:Zhang Yu-Yu, Chen Wang. Quantum Correlations in Two Interacting Atom Ensembles[OL].[30 September 2014] http://en.paper.edu.cn/en_releasepaper/content/4612044

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	3. Generalized rotating-wave approximation to biased qubit-oscillator systems
	Yu-Yu Zhang, Qing-Hu Chen, and Yang Zhao
	Physics 19 September 2014
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	Abstract:The generalized rotating-wave approximation with counter-rotatinginteractions has been applied toa biased qubit-oscillator system. Analytical expressions are explicitly givenfor all eigenvalues and eigenstates. For a flux qubit coupled to superconducting oscillators,spectra calculated by our approach are in excellent agreement with experiment.Calculated energy levels for a variety of biases also agree wellwith those obtained via exact diagonalization for a wide range of coupling strengths.Dynamics of the qubit has also been examined, and results lend further support to the validity of theanalytical approximation employed here. Our approachcan be readily implemented andapplied to superconductingqubit-oscillator experiments conducted currently and in the near futurewith a biased qubit and for all accessible coupling strengths.
	TO cite this article:Yu-Yu Zhang, Qing-Hu Chen, and Yang Zhao. Generalized rotating-wave approximation to biased qubit-oscillator systems[OL].[19 September 2014] http://en.paper.edu.cn/en_releasepaper/content/4610619


	4. Dynamic control of spin wave spectra using spin-polarzied currents
	WANG Qi,ZHANG Huaiwu,TANG Xiaoli,Hans Fangohr,BAI Feiming,ZHONG Zhiyong
	Physics 17 September 2014
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	Abstract:We describe a method of controlling the spin wave spectra dynamically in a uniform nanostripe waveguide through spin-polarized currents. A stable periodic magnetization structure is observed when the current flows vertically through the center of nanostripe waveguide. After being excited, the spin wave is transmitted at the sides of the waveguide. Numerical simulations of spin-wave transmission and dispersion curves reveal a single, pronounced band gap. Moreover, the periodic magnetization structure can be turned on and off by the spin-polarized current. The switching process from full rejection to full transmission takes place within less than 3ns. Thus, this type magnonic waveguide can be utilized for low-dissipation spin wave based filters.
	TO cite this article:WANG Qi,ZHANG Huaiwu,TANG Xiaoli, et al. Dynamic control of spin wave spectra using spin-polarzied currents[OL].[17 September 2014] http://en.paper.edu.cn/en_releasepaper/content/4610304


	5. Determination of the Magnetic Anisotropy of Fe/Si(001) Film by anisotropic magnetoresistance at low fields
	YE Jun,HE Wei,WU　Qiong,HU Bo,TANG Jin,ZHANG Xiangqun,CHEN Ziyu,CHENG Zhaohua
	Physics 25 August 2014
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	Abstract:It is challenging to investigate the magnetic anisotropy of Fe/Si(001) film in the case of both coherent rotation and domain wall displacement coexisting in magnetization reversal process. Owing to the domain wall displacement, the magnetization reversal switching field is far lower than the magnetic anisotropy field, and consequently, only the magnetization reversal process near cubic easy axis can be treated as coherent rotation. Here, we calculate the slope of the magnetic torque curve of iron film grown on Si(001) substrate near cubic easy magnetization axis to separate the coherent rotation of magnetization reversal process from domain wall displacement by anisotropic magnetoresistance (AMR). Furthermore, the magnitudes of various magnetic anisotropy constants were derived from the magnetic torque curves. Our work suggests that the AMR at low fields can clearly figure out the detailed contributions of various magnetic anisotropies when domain wall displacement existed in Fe(001) ultrathin film.
	TO cite this article:YE Jun,HE Wei,WU　Qiong, et al. Determination of the Magnetic Anisotropy of Fe/Si(001) Film by anisotropic magnetoresistance at low fields[J].


	6. The structural and optical properties of Be-doped GaAs grown by MBE
	Huimin Jia,Zhipeng Wei,Liang Chang,Dan Fang,Jilong Tang,Xuan Fang,Xiaohua Wang,Xiaohui Ma
	Physics 29 July 2014
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	Abstract: In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.
	TO cite this article:Huimin Jia,Zhipeng Wei,Liang Chang, et al. The structural and optical properties of Be-doped GaAs grown by MBE[OL].[29 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604845


	7. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes
	Gao Xian,Tang Jinglong,Fang Dan,Wang Shuangpeng,Zhao Haifeng,Wei Zhipeng,Fang Xuan,Wang Xiaohua,Xu Zhikun,Ma Xiaohui
	Physics 26 July 2014
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	Abstract:Many researches pay attention to the metal-semiconductor interface barrier height, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouse wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by MBE on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using Atomic Layer Deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-woltage(I-V) characteristics. Experimental result shown that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.
	TO cite this article:Gao Xian,Tang Jinglong,Fang Dan, et al. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes[OL].[26 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604839


	8. Ferromagnetism in Li-doped ZnO nanowires with Zn vacancies
	Cai Ningning,Cao Huawei,Zhang Xianlong,Lu Pengfei
	Physics 23 July 2014
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	Abstract:A comprehensive theoretical investigation on the electronic and magnetic properties of ZnO nanowire with Li dopants and vacancies has been performed using first-principles density functional theory. It is found that the Zn vacancy can induce magnetism but the formation energy of the system is high. The calculated results indicate that the introduction of Li-dopants will reduce the formation energy of system. The magnetic couplings of four configurations of ZnO nanowire with vacancies are studied, as well as their corresponding configurations with Li-dopants. Ferromagnetic properties can be improved/reversed after the introduction of Li-dopants. The FM mechanism is originated from the fierce p-p hybridization of O near the Fermi level. Li-doped ZnO nanowires with Zn vacancies are promising spintronic materials.
	TO cite this article:Cai Ningning,Cao Huawei,Zhang Xianlong, et al. Ferromagnetism in Li-doped ZnO nanowires with Zn vacancies[OL].[23 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604455


	9. The surface and photoluminescence properties of GaAs passivated by wet chemical method
	Chen Fang,Tang Jilong,Liu Guojun,Wei Zhipeng,Fang Dan,Gao Xian,Xu Zhikun,Fang Xuan,Ma Xiaohui,Wang Xiaohua
	Physics 22 July 2014
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	Abstract:The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH4)2S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH4)2S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH4)2S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications.
	TO cite this article:Chen Fang,Tang Jilong,Liu Guojun, et al. The surface and photoluminescence properties of GaAs passivated by wet chemical method[OL].[22 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604842


	10. Microphase transitions of block copolymer/homopolymer under shear flow
	GUO Yu-Qi,ZHANG Jin-Jun,WANG Bao-Feng,WU Hai-Shun,SUN Min-Na,PAN Jun-Xing
	Physics 23 June 2014
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	Abstract:Cell dynamics simulation is used to investigate the phase behaviors of block copolymer and homopolymer mixture subjected to the steady shear flow. Corresponding to a series of shear fields of different rates, we obtain the phase transitions occur from the transverse to parallel and then to perpendicular lamellar structure with the increasing of shear rate. It is the result of interaction between the shear flow and the concentration fluctuation. The examination of domain size $R_i(t)$ illustrates the result further. The rheological properties are considered, which consist of the first and second normal stress difference $N_{1},,N_{2}$ and the shear viscosity. They are all closely related with the direction of the lamellae. Furthermore, we explore specifically the phase behaviors and the order parameter under weak and strong shear of two different initial states, and realize the importance of the thermal history. It is very necessary to apply the shear field at the appropriate time if we want to get what we want. These results provide an easy method to create the ordered, defect-free materials in experiment and engineering technology through imposing shear flow.
	TO cite this article:GUO Yu-Qi,ZHANG Jin-Jun,WANG Bao-Feng, et al. Microphase transitions of block copolymer/homopolymer under shear flow[J].

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