Abstract:The vanadyl phthalocyanine thin film transistors were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates, and how the performance of these transistors affected by the surface properties was studied. The morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. The study of atomic force microscopy (AFM) and XRD reveals that the vanadyl phthalocyanine film on octadecyltrichlorosilane (OTS) modified substrate has much larger crystal size and better crystalline than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as well as non-modified substrates, and which contributes that the mobility of corresponding device is several and several dozen times relative to other ones. In addition, by means of static contact angle measurements, the wettabilities of water on silicon dioxide substrates modified with various organosilane SAMs were studied. The results of static contact angle measurements, XRD and AFM reveal that not only the surface hydrophobicity but also the length and type of organic capping group in organosilane SAMs affect the growth of VOPc films and device performance. The highest mobility for the transistor on OTS treated substrates may be due to that the attractive force between VOPc and OTS modified surface is smallest. The crystalline and crystal grain size of VOPc film on PTS is somewhere in between that on OTS treated and non-modified substrate may be the existence of attractive force between VOPc and SiO2 for the length of phenyl group in PTS is much shorter than alkyl chain group in OTS. The VOPc films' performance and crystalline on FDTS treated are worse than that on PTS, which may be the existents of attractive force between -CF3 and VOPc.

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	1. The Study of VOPc OTFTs on Various Organosilane Self-assembled Monolayer Modified Substrates
	Song De,Cui Ning
	Physics 18 November 2015
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	Abstract:The vanadyl phthalocyanine thin film transistors were fabricated on the various organosilane self-assembled monolayer (SAM) modified substrates, and how the performance of these transistors affected by the surface properties was studied. The morphologies and X-ray diffraction (XRD) spectrums of vanadyl phthalocyanine films on different SAM-modified surfaces were studied. The study of atomic force microscopy (AFM) and XRD reveals that the vanadyl phthalocyanine film on octadecyltrichlorosilane (OTS) modified substrate has much larger crystal size and better crystalline than those on phenyltrichlorosilane (PTS), 1H,1H,2H,2H-Perfluorodecyltrichlorosilane (FDTS) as well as non-modified substrates, and which contributes that the mobility of corresponding device is several and several dozen times relative to other ones. In addition, by means of static contact angle measurements, the wettabilities of water on silicon dioxide substrates modified with various organosilane SAMs were studied. The results of static contact angle measurements, XRD and AFM reveal that not only the surface hydrophobicity but also the length and type of organic capping group in organosilane SAMs affect the growth of VOPc films and device performance. The highest mobility for the transistor on OTS treated substrates may be due to that the attractive force between VOPc and OTS modified surface is smallest. The crystalline and crystal grain size of VOPc film on PTS is somewhere in between that on OTS treated and non-modified substrate may be the existence of attractive force between VOPc and SiO2 for the length of phenyl group in PTS is much shorter than alkyl chain group in OTS. The VOPc films' performance and crystalline on FDTS treated are worse than that on PTS, which may be the existents of attractive force between -CF3 and VOPc.
	TO cite this article:Song De,Cui Ning. The Study of VOPc OTFTs on Various Organosilane Self-assembled Monolayer Modified Substrates[OL].[18 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4662908


	2. Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature
	WAN Lei,HU Ke,MA Cheng,ZOU Peng,XU Jinzhang
	Physics 16 November 2015
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	Abstract:In this study, antimony doped tin oxide (SnO2:Sb, ATO) films have been prepared by DC magnetron sputtering at room temperature. X-ray diffraction revealed that the films are composed of nano-crystals with an average grain size of less than 10 nm. The effect of deposition parameters on the structural, electrical and optical properties of ATO films was investigated. The O2 flow rate and DC power were found to affect the properties of the ATO films. With an O2 flow rate of 0.2 sccm and a DC power of 60W, the electrical properties of the ATO films were significantly improved. In the wavelength range from 550 to 900 nm, the average optical transmittance of the ATO films is over 80%.
	TO cite this article:WAN Lei,HU Ke,MA Cheng, et al. Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature[OL].[16 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4662232

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	3. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth
	LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng,CHEN Songyan,HUANG Wei,LAI Hongkai
	Physics 13 November 2015
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	Abstract:Strain in germanium (Ge) and germanium-on-insulator (GOI) stripes with SiNx capping layer was modulated through varying stripe width and NH3/SiH4 gas ratio for growth of SiNx. It was found that tensile strain increases with augment of stripe width for Ge stripes, while decreases for GOI stripes. The divergence is attributable to higher strain relaxation in SiNx capping layer for Ge stripes and larger strain loss into SiO2 and Si substrate for GOI stripes as stripe width increase. Silicon nitride capping layers deposited at smaller NH3/SiH4 ratio result in larger tensile strain in Ge layer, which can be attributed to rich Si-H bonds in the SiNx layer.
	TO cite this article:LIN Guangyang,LAN Xiaoling,WANG Chen, et al. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661255


	4. Cu@metal nanowires network for transparent electrodes on n-AlGaN
	CAI Duanjun,WANG Huachun
	Physics 13 November 2015
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	Abstract:We propose a novel technique for fabricating a series of Cu@metal core-shell nanowires as transparent electrodes for III-nitride based devices. The superfine copper nanowires (13 nm) was synthesized by solution method and used as the platform to coat various metals such as nickle, zinc, vanadium or titanium, with which desired work function could be obtained. This nanowires network could be fabricated on wafer or even flexible substrates. High transparency was achieved in a very wide wavelength range from 200~2500 nm. The transparent electrodes showed low resistance as well as excellent stability in air.
	TO cite this article:CAI Duanjun,WANG Huachun. Cu@metal nanowires network for transparent electrodes on n-AlGaN[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661226


	5. Synthesis of large-size monolayer hexagonal BN film by low pressure CVD
	CAI Duanjun,WU Chenping
	Physics 13 November 2015
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	Abstract:We report the large-size synthesis of atomic monolayer hexagonal boron nitride (h-BN) film on flexible Cu foil by low pressure chemical vapor deposition (CVD) method. The borazane powder was used as the precursor carried by mixed hydrogen/argon gases. By rolling the Cu foil substrate into cylindrical shape, wafer-scale monolayer h-BN film has been achieved in a size over 7 inch. With the aid of PMMA, the h-BN monolayer was perfectly transferred onto 4" Si wafer for characterization and further electrical applications. This technique could be transferred to thin film growth on any flexible substrates.
	TO cite this article:CAI Duanjun,WU Chenping. Synthesis of large-size monolayer hexagonal BN film by low pressure CVD[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661223


	6. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts
	Li Cheng,Tang Mengrao,Lin Guangyang,Huang Wei,Wang Chen
	Physics 12 November 2015
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	Abstract:The mechanism to modulate the effective Schottky barrier height of NiGe/Ge contacts with impurity incorporation is still under debate. We experimentally demonstrate that ion implant damages, rather than interface passivation, play a dominant role in lowering the effective Schottky barrier height of NiGe/n-Ge contacts in the case of selenium and silicon implantation. Selenium segregated at the interface between NiGe and Ge acts as neither donor nor passivator for alleviation of Fermi- level pinning effect to greatly influence on the electrical characteristics. It is rather different from the role of phosphorus, which segregates at the interface leading to good ohmic behavior for the NiGe/n-Ge contacts by narrowing Schottky barrier. Si doping in Ge slightly increases the effective barrier height of the NiGe/n-Ge contacts.
	TO cite this article:Li Cheng,Tang Mengrao,Lin Guangyang, et al. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts[OL].[12 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661258


	7. High sensitive microfluidic flow sensor based on aligned piezoelectric nanofibers
	ZHANG Lingling,YU Xiaolei,YOU Sujian,LIU Huiqin,ZHANG Cancan,CAI Bo,XIAO Liang,LIU Wei,GUO Shishang,ZHAO Xingzhong
	Physics 19 October 2015
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	Abstract:A microfluidic flow sensor based on aligned polyvinylidene fluoride trifluoroethylene P(VDF-TrFE) piezoelectric nanofibers has been developed, which can be used for real-time detection of low flow rate and viscosity in microchannels. The detection principle dependence of voltage drop output by nanofibers while sensing pressure drop along the microchannel. Due to the high sensitivity of nanofibers, this sensor responded linearly to low flow rates ranging from 13 µl/h to 451 µl/h, and viscosities of ethylene glycol aqueous solution ranging from 1 mPa•S to 16.1 mPa•S at 25℃, respectively. These findings highlight the potential of P(VDF-TrFE) nanofibers in multifunctional sensors.
	TO cite this article:ZHANG Lingling,YU Xiaolei,YOU Sujian, et al. High sensitive microfluidic flow sensor based on aligned piezoelectric nanofibers[OL].[19 October 2015] http://en.paper.edu.cn/en_releasepaper/content/4658132


	8. Molecular Design and Performance of Novel Metalloporphyrin Dyes for Efficient Dye-Sensitized Solar Cells
	SUN Qilong,DAI Ying,HUANG Baibiao
	Physics 19 October 2015
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	Abstract:In search of higher photoelectric conversion efficiency, we design a series of novel donor-π-acceptor sensitizers for dye-sensitized solar cells (DSSCs). The proposed zinc porphyrin sensitizers have been theoretically validated to show superior efficiency to YD2-o-C8. The geometries, electronic structure and optical properties of five new proposed metalloporphyrin dye molecules are firstly checked on the basis of density functional theory (DFT) in conjunction with time-dependent density functional theory (TD-DFT) calculations. The geometric structures of the considered dye molecules show varying degrees of deformation. Furthermore, some novel magnetic characteristics are involved in the cases of Fe-dye and Cu-dye. The detailed analysis of the UV/Vis absorption spectra indicates that, compared with the Zn-dye, Cd-dye, Mg-dye and Ni-dye would present improved light absorption properties . In addition, we further demonstrate that the transition metal atoms (Fe and Cu) play an important role in promoting the electron injection as well as the reduction of dye molecules in system of dye/(TiO2)38, which is a model system as a photoanode. These findings contribute to the comprehensive understanding about such type of metalloporphyrin dye molecules and shed insight on the synthesis and application of sensitizers in the near future.
	TO cite this article:SUN Qilong,DAI Ying,HUANG Baibiao. Molecular Design and Performance of Novel Metalloporphyrin Dyes for Efficient Dye-Sensitized Solar Cells[OL].[19 October 2015] http://en.paper.edu.cn/en_releasepaper/content/4656089


	9. Spin-wave propagating spectrum in magnetization-modulated cylindrical nanowire
	LI Zhixiong,Wang Mengning,NIE Yaozhuang,Wang Daowei,Tang Wei,GUO Guanghua
	Physics 30 September 2015
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	Abstract:We investigate the spin-wave propagation in magnetization-modulated cylindrical nanowire by using micromagnetic simulations. Several spin-wave bandgaps are observed on spin-wave propagating spectra and dispersion curves, which are caused by the Bragg reflection of the propagating spin waves at the Brillouin zone boundaries. The bandgaps can be effectively tuned by changing the magnetization modulation level and the periodic length. The manipulation mechanism of the band structure is explained through combined consideration of the periodic effective field and the spin-wave scattering characteristics at the interface of two magnetization segments.
	TO cite this article:LI Zhixiong,Wang Mengning,NIE Yaozhuang, et al. Spin-wave propagating spectrum in magnetization-modulated cylindrical nanowire[OL].[30 September 2015] http://en.paper.edu.cn/en_releasepaper/content/4656499


	10. Edge related ferromagnetism in MoSe2 nanoflakes prepared via efficient chemical vapor deposition method
	Gao Daqiang,Xia Baorui,Shi Shoupeng,Tao Kun,Xue Desheng
	Physics 25 September 2015
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	Abstract:Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets for their potential applications in nano-electronics and spintronics. Here, ultrathin MoSe2 nanoflakes with plenty of edges were prepared via efficient chemical vapor deposition method. magnetic measurement results indicate that the sample exhibits strong ferromagnetic behaviour with saturation magnetization of 1.4 emu/g at room temperature, where the ferromagnetism persists up to 700 K, revealing the high Curie temperature of this material. Density functional theory spin-polarized calculations predict that strong ferromagnetic moments in MoSe2 nanoflakes are attributed to the zigzag edges. Our findings also suggest that the MoSe2 nanoflakes with a high density of edge spins could be used to fabricate spintronics devices, which are circuits utilizing the spin of the electron to process and store information.
	TO cite this article:Gao Daqiang,Xia Baorui,Shi Shoupeng, et al. Edge related ferromagnetism in MoSe2 nanoflakes prepared via efficient chemical vapor deposition method[OL].[25 September 2015] http://en.paper.edu.cn/en_releasepaper/content/4655492

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