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	1. Device Characteristics Research of the Overlap Double Gate MOSFET
	HAN Mingjun,CHI Xiaoli,Xue Feng,KE Daoming
	Electrics, Communication and Autocontrol Technology 15 January 2012
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	Abstract:In this paper an overlap double gate structure MOSFET model is researched and compared with split double gate structures in this paper. This structure is emulated by MEDICI software. The simulation results show that the channel surface electric field of the overlap double gate structure is modulated. The short channel effect and hot carrier injection is reduced. Breakdown voltage is increased; meanwhile, the equivalent gate capacitance is dropped. Transconductance could be regulated by gate voltage. Along with the channel shorten, threshold voltage change rate of overlap double gate is smallest than the others.
	TO cite this article:HAN Mingjun,CHI Xiaoli,Xue Feng, et al. Device Characteristics Research of the Overlap Double Gate MOSFET[OL].[15 January 2012] http://en.paper.edu.cn/en_releasepaper/content/4459579


	2. A PSO Parameter Extraction Method for SOI MOSFETs based on BSIM SOI Model
	Zheng Xue ,Zhang Guohe,Shao Jun,Chen Kebin
	Electrics, Communication and Autocontrol Technology 27 December 2011
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	Abstract:Abstract: A parameter extraction and optimization strategy using PSO (Particle Swarm Optimization) algorithm is presented for SOI (Silicon On Insulator) MOSFETs（Metal-Oxide -Semiconductor Field Effect Transistor） based on the BSIM SOI 3.1 model which is developed by the BSIM group of UC Berkeley. The global optimal strategy and standard PSO algorithm are implemented to fulfill the extraction of direct-current parameters, which are related to gate voltage and drain voltage. The values of the optimal parameters, which are got from multiple experiments, are as follows: inertia factor w=0; learning factor c1=c2=2; the initialization of the particle swarm is a random distribution; the value of swarm scale is 30. The algorithm shows a perfect convergence rate and can be used as a possible global extraction method for MOSFETs devices.
	TO cite this article:Zheng Xue ,Zhang Guohe,Shao Jun, et al. A PSO Parameter Extraction Method for SOI MOSFETs based on BSIM SOI Model[OL].[27 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4456270

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	3. NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer
	QIN Yuxiang,LIU Kaixuan
	Electrics, Communication and Autocontrol Technology 27 December 2011
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	Abstract:W18O49 nanowires solvothermally synthesized were modified by depositing a thin layer of titanium (Ti) overlayer on the surface using magnetron sputtering method, followed by annealing at 350℃ for 2 h. The microstructure of pure and Ti-modified W18O49 nanowires were investigated. Gas sensors based on pure and Ti-modified W18O49 nanowires were fabricated and the NO2-sensing properties were examined. Ti modifying not only lowered the optimal operating temperature of W18O49 nanowires sensors from 150℃to room temperature but also improved the maximum gas response value. In particular, temperature-dependent response characteristic reversal was observed for the Ti-modified W18O49 nanowires, which behave as a p-type semiconductor at room temperature. Besides, the Ti-modified nanowires exhibited rapid response characteristic to NO2 gas. The Ti-modified nanowires film obtained by controlling the tiatanium sputtering time to 1 min showed the highest gas response value and the shortest response time at room temperature.
	TO cite this article:QIN Yuxiang,LIU Kaixuan. NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer[OL].[27 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4457950


	4. Thermal annealing effect on sputtered tungsten oxide thin films
	QIN Yuxiang,SHEN Wanjiang
	Electrics, Communication and Autocontrol Technology 26 December 2011
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	Abstract:Tungsten oxide thin films have been deposited on alumina substrates by reactive radio frequency (rf) magnetron sputtering, following by annealed in air at 200, 300, 400, and 600 oC for 4 h. The effects of thermal annealing on the microstructure and gas sensing properties of the tungsten oxide thin films were studied. The surface morphology, microstructure and chemical composition of the annealed films were investigated by X-ray diffraction(XRD), field emission scanning electron microscope (FE-SEM) and X-ray photoelectron spectroscopy (XPS) techniques. When raising the annealing temperature from 200oC to 400oC, the film tends to crystallize to triclinic structure from amorphous state, while higher temperature results in an increase in grain size and a shrinkage of structural pores. The film annealed at 400oC has lower O/W ratio than the one annealed at 600oC. The NO2-sensing properties of the annealed films were also evaluated, and the measurements revealed that the tungsten oxide film annealed at 400 oC has a quicker response/recovery and the highest sensitivity to 1ppm NO2 due to its loose and porous structure and small grain size.
	TO cite this article:QIN Yuxiang,SHEN Wanjiang. Thermal annealing effect on sputtered tungsten oxide thin films[OL].[26 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4457894


	5. A Compact Dual-Band Monopole Antenna with A T-shaped Slot for WLAN Application
	LIU Fangsen,HONG Xiaobin
	Electrics, Communication and Autocontrol Technology 19 November 2011
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	Abstract:A compact dual-band planar monopole antenna for WLAN applications is presented in this paper. The proposed antenna embedded a T-shaped slot can cover 2.4/5.2/5.8 GHz WLAN operating bands. By inserting a T-shaped slot, the compact structure can be achieved. The proposed antenna has a size of 15 ×30 mm2. The prototype of the proposed antenna has been constructed and measured. The measured results of the fabricated antenna show that the impedance bandwidths (S11≤-10dB) are 2.16 - 2.58 GHz and 4.5 - 6.5 GHz, which cover all the 2.4/5.2/5.8 GHz WLAN operating bands. And good omni-directional radiation patterns and antenna gains across the two frequency ranges have been obtained. Details of the antenna design and analysis are discussed in this paper.
	TO cite this article:LIU Fangsen,HONG Xiaobin. A Compact Dual-Band Monopole Antenna with A T-shaped Slot for WLAN Application[OL].[19 November 2011] http://en.paper.edu.cn/en_releasepaper/content/4450754


	6. High-Order Analytic Approximation for MOSFET Surface Potential with Lateral Channel Field Effect
	CHANG Sheng,HUANG Qijun,WANG Gaofeng,WANG Hao
	Electrics, Communication and Autocontrol Technology 11 October 2011
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	Abstract:Gradual channel approximation of MOSFET is not available if lateral channel field effect is considered, and as the result, the profile of surface potential is also changed. In this paper, a high order analytical calculation of MOSFET surface potential, considering lateral channel field effect, is introduced. By maintaining the high order term of basic surface potential formulation, accuracy can be improved greatly while no obvious addition of calculation time.
	TO cite this article:CHANG Sheng,HUANG Qijun,WANG Gaofeng, et al. High-Order Analytic Approximation for MOSFET Surface Potential with Lateral Channel Field Effect[OL].[11 October 2011] http://en.paper.edu.cn/en_releasepaper/content/4444921


	7. Physical Modeling of On-chip Sub-nH Spiral Inductor
	Yang Kang ,Yan Na
	Electrics, Communication and Autocontrol Technology 22 July 2011
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	Abstract:In this paper, a new physical model for sub-nH spiral inductors in CMOS integrated circuits (IC) design is developed. Based on physical analysis of on-chip inductors' high frequency effects, П topology with RLC elements is adopted to capture the lumped characteristics of on-chip sub-nH spiral inductor. The interconnects between inductors and other devices are incorporated into the proposed model, which simplifies the circuit and layout design. The new model demonstrates a good agreement with measured S-parameter within 40GHz through analytical calculation and data fitting. Finally, the proposed inductor model is employed in a 20-GHz 4.8dB-NF low noise amplifier (LNA) design for accurate circuit simulation.
	TO cite this article:Yang Kang ,Yan Na . Physical Modeling of On-chip Sub-nH Spiral Inductor[OL].[22 July 2011] http://en.paper.edu.cn/en_releasepaper/content/4436244


	8. WSN Topological Research Used to Reduce Time Delay Based on Bellman-Ford
	Wang Mei,Ma Xiaoping
	Electrics, Communication and Autocontrol Technology 11 June 2011
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	Abstract:This paper introduced the importance of reducing data transmission delay in wireless sensor network real-time applications. Experimental proof and theoretical deduction showed that reducing nodes hops was the fundamental problems to reduce time delay. The problems of low delay and low energy consumption were solved through the WSN topology control model of reducing the delay which was built by the topology tree of minimum number hops based on Bellman-Ford. In addition, the maintenance of model was studied in order to improve the robustness. Simulation result showed that this design model compared to other agreement algorithm had superiority.
	TO cite this article:Wang Mei,Ma Xiaoping. WSN Topological Research Used to Reduce Time Delay Based on Bellman-Ford[OL].[11 June 2011] http://en.paper.edu.cn/en_releasepaper/content/4431001


	9. Experimental investigation on silicon microchannel plate electron multiplier
	WANG Guozheng,LAN Chunlei,WANG Yang,CHENG Hongchang,QIN Xulei,JIANG Zhenhua,DUANMU Qingduo
	Electrics, Communication and Autocontrol Technology 18 May 2011
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	Abstract:A Silicon microchannel arrays with the very high aspect ratio was prepared by the photo-assisted electrochemical etching process. The mechanism of silicon anisotropy etching, the process parameters, the inducing pit arrays and the channel morphology were investigated, and the condition of etching current density for steady microchannel growth was discussed. The continuous SiO2 thin film dynode was fabricated by LPCVD process. The insulation, conductive and electron emission layer of the dynodes were studied and prepared. We obtained the samples of silicon microchannel plate with 25 mm of the plate diameter, 4-6(m of channel side size, 1-2(m of the channel space, more than 40 of aspect ratio, 7 channel bias angle, and 165 of the electron gain at 680V working voltage. The experimental study on silicon microchannel plate indicates that the process of Silicon microchannel plate in this paper is feasible.
	TO cite this article:WANG Guozheng,LAN Chunlei,WANG Yang, et al. Experimental investigation on silicon microchannel plate electron multiplier[OL].[18 May 2011] http://en.paper.edu.cn/en_releasepaper/content/4428443


	10. Simultaneous growth mechanism of ZnO microwires and nanotetrapods by a double-stream CVD
	Ma Jinxue,Zhang Heqiu,Sun Kaitong,Qiu Yu,Hu Lizhong
	Electrics, Communication and Autocontrol Technology 21 February 2011
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	Abstract:As fundamental materials for semiconductor devices, low dimensional structures of ZnO have attracted extensive research interest. Ultralong ZnO microwires (MWs) and ZnO nanotetrapods (NTs) have been synthesized simultaneously in different growth regions via a novel double-stream growth chemical vapor deposition (CVD) method. The morphology of ZnO MWs and NTs was investigated by the scanning electron microscopy (SEM). Ultralong ZnO MWs with a perfect hexagonal morphology were formed on the quartz tube in the upstream growth region, and ZnO NTs were deposited on the substrate in the downstream growth region. The novel CVD method is attributed to the special gas flow and the tem-perature distribution in the small quartz tube (SQT). By using the vapor-solid (VS) growth mode and a backflow growth model, the growth mechanism of such unique double-stream growth phenomenon was discussed.
	TO cite this article:Ma Jinxue,Zhang Heqiu,Sun Kaitong, et al. Simultaneous growth mechanism of ZnO microwires and nanotetrapods by a double-stream CVD[OL].[21 February 2011] http://en.paper.edu.cn/en_releasepaper/content/4411434

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